Nitride semiconductor device
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United States of America Patent
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Feb 10, 2004
Grant Date -
Nov 8, 2001
app pub date -
Apr 10, 2001
filing date -
Oct 16, 1998
priority date (Note) -
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Abstract
A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
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