Pre-fusion oxidized and wafer-bonded vertical cavity laser
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United States of America Patent
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Dec 23, 2003
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app pub date -
Apr 11, 2001
filing date -
Jan 31, 1998
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Abstract
It was proposed to combine two successful VCL technologies, wafer fusion and selective oxidation, in a new way to form a long wavelength VCL. The Al(ga)As oxidation is performed via fusion channels before the actual wafer fusion step. By doing so, the structure combines the advantages of two different, successful long wavelength VCL structures; the double fused and the single fused, oxygen implanted VCL.
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