Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates
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United States of America Patent
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Oct 22, 2002
Grant Date -
Dec 13, 2001
app pub date -
May 8, 2001
filing date -
May 16, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.
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