METHOD FOR CLEANING SEMICONDUCTOR WAFER HAVING COPPER STRUCTURE FORMED THEREON
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United States of America Patent
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N/A
Issued Date -
Dec 20, 2001
app pub date -
Sep 30, 1998
filing date -
Sep 29, 1998
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A cleaning solution and method for removing copper contaminants, slurry particles and other contaminants from the polished surfaces of copper interconnect structures are provided. The cleaning solution comprises various combinations of a plurality of the following components: a zeta potential modifier, a pH adjuster, a contamination remover and a corrosion inhibitor. A corrosion inhibitor remover also may be provided to remove the corrosion inhibitor following contamination removal with the cleaning solution. The cleaning solution components may be pre-mixed or the components may be delivered individually, either simultaneously or sequentially in any order, to the surface of a semiconductor wafer during cleaning.
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