Importance

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Abstract

A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semiconductor device; a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material; a second insulating film covering the first insulating film and the capacitor element; a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.

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First Claim