Method of manufacturing semiconductor device including a cleaning step, and semiconductor device manufactured thereby
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United States of America Patent
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Nov 19, 2002
Grant Date -
Jan 3, 2002
app pub date -
Jan 10, 2001
filing date -
Jun 30, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a process of cleaning a semiconductor substrate on which a polysilicon film serving as a silicon-based member and a tungsten film serving as a tungsten-based member are exposed simultaneously, there is used a cleaning fluid containing a hydroxide, a water-soluble organic solvent, a compound expressed by the following chemical formula (I) or (II) which is to serve as a silicon corrosion inhibitor, an organic compound, and at least one organic compound which is to serve as a tungsten corrosion inhibitor. HO-{(EO)x-(PO)y}z-H (I) R-[{(EO)x-(PO)y}z-H]m (II)
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