Thin film, method for manufacturing thin film, and electronic component
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 24, 2002
app pub date -
Jun 5, 2001
filing date -
Jul 19, 2000
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully