METHOD AND APPARATUS FOR THE FORMATION OF DIELECTRIC LAYERS
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United States of America Patent
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Issued Date -
Jan 24, 2002
app pub date -
Jun 12, 1998
filing date -
Jun 12, 1998
priority date (Note) -
Abandoned
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Abstract
A method and apparatus for forming and annealing a dielectric layer. According to the present invention an active atomic species is generated in a first chamber. A dielectric layer formed on a substrate is then exposed to the active atomic species in a second chamber, wherein the second chamber is remote from the first chamber.
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