MRAM architectures for increased write selectivity
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United States of America Patent
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Jul 23, 2002
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N/A
app pub date -
Sep 26, 2001
filing date -
Jul 18, 2000
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Abstract
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits.
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