METHOD OF IMPROVING THE RELIABILITY OF GATE OXIDE LAYER
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United States of America Patent
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Issued Date -
Jan 31, 2002
app pub date -
Feb 9, 1999
filing date -
Feb 9, 1999
priority date (Note) -
Abandoned
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Abstract
A method of improving the reliability of a gate oxide layer. A substrate has a gate formed thereon and a dielectric layer is formed on the substrate. Metal interconnects are formed on the dielectric layer. A liner insulated layer is formed by LPCVD, APCVD or PECVD, for example, to cover the dielectric layer and the interconnects. An inter-metal dielectric layer is formed on the liner insulated layer by HDPCVD.
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