Multilayer thin film and its fabrication process as well as electron device
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United States of America Patent
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Mar 23, 2004
Grant Date -
Feb 7, 2002
app pub date -
Apr 27, 2001
filing date -
Apr 27, 2000
priority date (Note) -
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Abstract
The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
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