Electrically programmable memory element with raised pore
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United States of America Patent
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Nov 9, 2004
Issued Date -
N/A
app pub date -
Aug 2, 2001
filing date -
Mar 25, 1999
priority date (Note) -
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Abstract
A programmable resistance memory element including a pore of memory material which is raised above a semiconductor substrate by a dielectric layer. The pore may be formed with the use of sidewall spacers.
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