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Abstract

A novel super-self-aligned (SSA) structure and manufacturing process uses a single photomasking layer to define critical features and dimensions of a trench-gated vertical power DMOSFET. The single critical mask determines the trench surface dimension, the silicon source-body mesa width between trenches, and the dimensions and location of the silicon mesa contact. The contact is self-aligned to the trench, eliminating the limitation imposed by contact-to-trench mask alignment in conventional trench DMOS devices needed to avoid-process-induced gate-to-source shorts. Oxide step height above the silicon surface is also reduced avoiding metal step coverage problems. Poly gate bus step height is also reduced. Other features described include polysilicon diode formation, controlling the location of drain-body diode breakdown, reducing gate-to-drain overlap capacitance, and utilizing low-thermal budget processing techniques.

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First Claim