Importance

Loading Importance Indicators...

Abstract

A junction isolated Complementary Metal Oxide Semiconductor (CMOS) transistor device includes a substrate of a first conductivity type and first and second buried layers formed within the substrate and having a second conductivity type opposite from the first conductivity type. First and second well regions of respective first and second conductivity are formed above respective first and second buried layers. An NMOS transistor and PMOS transistor are formed in the respective first and second well regions. The buried layer of the NMOS transistor is at -V (typically ground) and the buried layer of the PMOS transistor is biased at a positive supply voltage and spaced sufficiently from the NMOS transistor to improve single event effects occurrence.

Loading the Abstract Image...

First Claim