Ferroelectric memory having dielectric layer of siof and method for fabricating the dielectric layer
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United States of America Patent
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Issued Date -
Feb 21, 2002
app pub date -
May 12, 2000
filing date -
Jul 16, 1999
priority date (Note) -
Abandoned
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Abstract
A ferroelectric memory having a dielectric layer comprised of SiOF, and a method for fabricating the SiOF dielectric layer are provided. Degradation in the ferroelectric properties due to hydrogen atoms can be prevented by depositing a SiOF dielectric layer using SiF.sub.4, instead of depositing a SiO.sub.2 dielectric layer, which has been conventionally used. The ferroelectric memory device, and the method of making the device, provide a stabilized device having less or no degradation in the ferroelectric properties.
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