Gaseous process for surface preparation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
N/A
Issued Date -
Feb 28, 2002
app pub date -
Apr 6, 2001
filing date -
Apr 7, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Silicon oxide on a substrate may be etched by providing the substrate in a process chamber, evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture comprising an inert gas, alcohol and water to the process chamber and substrate and, subsequently further providing a gaseous anhydrous halogen containing species to the gaseous mixture provided to the process chamber and substrate.
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