Light modulator on a semiconductor substrate
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United States of America Patent
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N/A
Issued Date -
Mar 7, 2002
app pub date -
Feb 23, 2001
filing date -
Feb 2, 1998
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An infra-red light-modulating device comprises a semiconductor substrate, a layer of light-modulating material such as liquid crystal on a first part of the substrate, and electrodes for addressing the light-modulating layer, the electrode in one side can be a common ITO layer, and the pixel electrodes are formed by diffusions in the silicon. The drive circuitry for addressing the light-modulating layer via the electrodes is provided in a second part of the semiconductor substrate to the side of the pixels. In this way a transmissive modulator is formed, since the electrodes are made of a material (silicon) transparent to the wavelength of the light used. The modulating effect is preferably doubled by reflecting the light back through the modulator with a mirror.
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