MOSFET power device manufactured with reduced number of masks by fabrication simplified processes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6404025
APP PUB NO 20020030224A1
SERIAL NO

08942885

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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This invention discloses a semiconductor substrate supports a semiconductor power device. The semiconductor substrate includes a plurality of polysilicon segments disposed over a gate oxide layer including two outermost segments and inner segments wherein each of the inner segments functioning as a gate and the two outermost segments functioning as a field pate and an equal potential ring separated by an oxide-plug gap having an aspect ratio greater or equal to 0.5. Each of the inner segments functioning as a gate having a side wall spacer surrounding edges of the inner segments, and the oxide plug gap being filled with an oxide plug for separating the field plate from the equal potential ring. A plurality of power transistor cells disposed in the substrate for each of the gates covered by an overlying insulation layer having a plurality of contact openings defined therein. A plurality of metal segments covering the overlying insulation layer and being in electric contact with the power transistor cells through the contact openings. A plurality of deep-and-narrow gaps between the metal segments wherein each gap having an aspect ratio equal or greater than 0.5. A passivation layer disposed in the deep-and-narrow gaps between the metal segments having a thickness substantially the same as the metal segments for blocking mobile ions from entering into the power transistor cells.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ALPHA & OMEGA SEMICONDUCTOR, LTD.HAMILTON HM12175

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hshieh, Fwu-Iuan Saratoga, CA 163 5012
Tsui, Yan Man Union City, CA 31 804

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 5905289 Planarized metallurgy structure for a semiconductor and process of fabrication 8 1998
 
Nippondenso Co., Ltd. (1)
* 5798550 Vertical type semiconductor device and gate structure 11 1995
 
Siliconix Incorporated (1)
* 5404040 Structure and fabrication of power MOSFETs, including termination structures 64 1993
 
FUJITSU LIMITED (1)
* 4879255 Method for fabricating bipolar-MOS devices 52 1988
 
GE SOLID STATE PATENTS, INC. (1)
* 4532534 MOSFET with perimeter channel 56 1982
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
DEUTSCHE BANK AG NEW YORK BRANCH (1)
* 2010/0264,487 Method of Manufacturing a Trench Transistor Having a Heavy Body Region 3 2010
 
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER (1)
* 7265064 Semiconductor device with porous interlayer insulating film 4 2004
 
KABUSHIKI KAISHA TOSHIBA (6)
* 6972460 Semiconductor device and manufacturing method thereof 10 2003
* 2004/0251,516 Semiconductor device and manufacturing method thereof 1 2003
* 7462541 Manufacturing method of semiconductor device 1 2005
* 2006/0049,459 Semiconductor device and manufacturing method thereof 3 2005
7994006 Manufacturing method of semiconductor device 0 2008
* 2009/0075,433 Manufacturing Method of Semiconductor Device 4 2008
 
FAIRCHILD SEMICONDUCTOR CORPORATION (6)
7511339 Field effect transistor and method of its manufacture 16 2003
* 2004/0145,015 Field effect transistor and method of its manufacture 3 2003
7736978 Method of manufacturing a trench transistor having a heavy body region 0 2006
7696571 Method of manufacturing a trench transistor having a heavy body region 0 2008
8476133 Method of manufacture and structure for a trench transistor having a heavy body region 4 2010
8044463 Method of manufacturing a trench transistor having a heavy body region 0 2010
 
INFINEON TECHNOLOGIES AUSTRIA AG (3)
8866255 Semiconductor device with staggered oxide-filled trenches at edge region 0 2009
* 2010/0155,879 SEMICONDUCTOR DEVICE 12 2009
9508812 Semiconductor device 0 2014
 
PROMOS TECHNOLOGIES INC. (1)
* 6660592 Fabricating a DMOS transistor 1 2002
 
M-TECH INSTRUMENT CORPORATION (HOLDING) LIMITED (2)
* 7752910 Micromachined mass flow sensor and methods of making the same 5 2008
* 2008/0271,525 Micromachined mass flow sensor and methods of making the same 3 2008
 
INFINEON TECHNOLOGIES AG (3)
* 8809966 Semiconductor device 1 2008
* 2009/0230,561 SEMICONDUCTOR DEVICE 4 2008
9287373 Semiconductor device 0 2014
* Cited By Examiner