MOSFET power device manufactured with reduced number of masks by fabrication simplified processes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6404025
APP PUB NO 20020030224A1
SERIAL NO

08942885

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Abstract

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This invention discloses a semiconductor substrate supports a semiconductor power device. The semiconductor substrate includes a plurality of polysilicon segments disposed over a gate oxide layer including two outermost segments and inner segments wherein each of the inner segments functioning as a gate and the two outermost segments functioning as a field pate and an equal potential ring separated by an oxide-plug gap having an aspect ratio greater or equal to 0.5. Each of the inner segments functioning as a gate having a side wall spacer surrounding edges of the inner segments, and the oxide plug gap being filled with an oxide plug for separating the field plate from the equal potential ring. A plurality of power transistor cells disposed in the substrate for each of the gates covered by an overlying insulation layer having a plurality of contact openings defined therein. A plurality of metal segments covering the overlying insulation layer and being in electric contact with the power transistor cells through the contact openings. A plurality of deep-and-narrow gaps between the metal segments wherein each gap having an aspect ratio equal or greater than 0.5. A passivation layer disposed in the deep-and-narrow gaps between the metal segments having a thickness substantially the same as the metal segments for blocking mobile ions from entering into the power transistor cells.

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Patent Owner(s)

Patent OwnerAddress
ALPHA AND OMEGA SEMICONDUCTOR LTDCANON'S COURT 22 VICTORIA STREET HAMILTON HM12

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hshieh, Fwu-Iuan Saratoga, CA 163 5216
Tsui, Yan Man Union City, CA 31 831

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