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Abstract

A method for fabricating high efficiency light-emitting diode (LED) adhered to a transparent substrate is disclosed. To begin with, forming a semiconductor substrate, is followed by sequentially forming an etching stopper, a first type ohmic contact layer, a double heterostructure and a second ohmic contact layer. Afterwards, the transparent substrate, such as preferably glass, is adhered onto the second ohmic contact layer and then the GaAs substrate is removed away. After that, the first type cladding layer and the undoped active layer is etched in turn by using the second type ohmic contact layer as the etching stopper. Finally, a first electrode is formed on the first type ohmic contact layer and a second electrode is formed on the second type ohmic contact layer, respectively. The present invention utilizes some features, such as high transmittance and lower absorptivity, of the glass adhered to the second ohmic contact layer to visible light for increasing luminous intensity of the LED. Moreover, the absorption of visible light of the GaAs substrate can be significantly improved by decreasing the use of the GaAs material.

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First Claim