US Patent Application No: 2002/0035,710

Number of patents in Portfolio can not be more than 2000

SEMICONDUCTOR STORAGE DEVICE

1 Status Updates

Stats

ATTORNEY / AGENT: (SPONSORED)
 

Importance

Loading Importance Indicators... loading....

Abstract

First data ("00", "01", "10", "11") corresponding to threshold voltages of four values (1 V, 2 V, 3 V, 4 V) are stored in the individual memory cells of an EEPROM. Upon reading, a decoder circuit assigns bits so that neighboring first data have only one different bit in their two-bit architectures, thus converting the first data into second data ("00", "01", "11", and "10"), and outputting the second data as storage data of the memory cells. Even when multiple-valued storage data are lost from the EEPROM due to data errors arising from deterioration of memory cells which have inevitably occurred after repetitive uses, error detection and error correction can be efficiently and accurately done. Of course, the data to be stored is not limited to 2-bit data, but the present invention can also be applied to multiple-valued data of 3 bits or more.

Loading the Abstract Image... loading....

First Claim

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
INTELLECTUAL VENTURES I LLCDENKENDORF1047
PEGERE SEMICONDUCTORS, LLCLAS VEGAS, NV56

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hazama, Katsuki Tokyo, JP 47 287
MIURA, HIROMOTO TOKYO, JP 1 4

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (2)
8,028,206 Memory device including memory controller 0 2007
8,230,301 Memory device including memory controller 2011
 
INTEL CORPORATION (1)
7,653,846 Memory cell bit valve loss detection and restoration 1 2006
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
8,443,258 Memory device including memory controller 0 2012