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United States of America Patent

APP PUB NO 20020035710A1
SERIAL NO

09089359

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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First data ('00', '01', '10', '11') corresponding to threshold voltages of four values (1 V, 2 V, 3 V, 4 V) are stored in the individual memory cells of an EEPROM. Upon reading, a decoder circuit assigns bits so that neighboring first data have only one different bit in their two-bit architectures, thus converting the first data into second data ('00', '01', '11', and '10'), and outputting the second data as storage data of the memory cells. Even when multiple-valued storage data are lost from the EEPROM due to data errors arising from deterioration of memory cells which have inevitably occurred after repetitive uses, error detection and error correction can be efficiently and accurately done. Of course, the data to be stored is not limited to 2-bit data, but the present invention can also be applied to multiple-valued data of 3 bits or more.

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Patent Owner(s)

Patent OwnerAddress
INTELLECTUAL VENTURES I LLC251 LITTLE FALLS DRIVE WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAZAMA, KATSUKI TOKYO, JP 42 484
MIURA, HIROMOTO TOKYO, JP 1 6

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