
US Patent Application No: 2002/0035,710
Number of patents in Portfolio can not be more than 2000
SEMICONDUCTOR STORAGE DEVICE
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Mar 21, 2002
Publication date -
Jun 3, 1998
filing date -
09/089,359
serial no -
ABAN
status
Importance
Abstract
First data ("00", "01", "10", "11") corresponding to threshold voltages of four values (1 V, 2 V, 3 V, 4 V) are stored in the individual memory cells of an EEPROM. Upon reading, a decoder circuit assigns bits so that neighboring first data have only one different bit in their two-bit architectures, thus converting the first data into second data ("00", "01", "11", and "10"), and outputting the second data as storage data of the memory cells. Even when multiple-valued storage data are lost from the EEPROM due to data errors arising from deterioration of memory cells which have inevitably occurred after repetitive uses, error detection and error correction can be efficiently and accurately done. Of course, the data to be stored is not limited to 2-bit data, but the present invention can also be applied to multiple-valued data of 3 bits or more.
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