Importance

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Abstract

A MMIC (microwave monolithic integrated circuit) power amplifier and method for the same is provided. A smaller die size and higher power output are realized with the improved amplifier and transistor geometry herein provided. In particular, transistors, such as FETs (field effect transistors) are displaced from a conventional FET geometry with alternating FETs being rotated in opposite directions. The inputs (gate pads) and outputs (drain pads) of two adjacent FETs may be 'shared.' The improved FET configuration reduces the number of splitting and combining networks by up to 50% over the prior art and the die area for a typical 4 watt power amplifier is reduced by 48-72% over the prior art. The improved amplifier configuration provides a multi-sectional configuration wherein one section may be the mirrored image of another. In a two section amplifier, the amplifier appears to be 'folded.'

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First Claim