Compositions for cleaning organic and plasma etched residues for semiconductor devices
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United States of America Patent
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Aug 17, 2004
Grant Date -
Mar 28, 2002
app pub date -
Jul 10, 2001
filing date -
Jul 10, 2000
priority date (Note) -
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Abstract
A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
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