High linearity, low offset interface for hall effect devices

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United States of America Patent

PATENT NO 6525524
APP PUB NO 20020041180A1
SERIAL NO

09952710

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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'A Hall effect sensor or device may be used in a variety of embodiments, such as measuring current within an associated conductor by helping to measure flux density within a gap of a ferromagnetic power meter core, such as in a power meter. A high linearity interface for a Hall effect device is provided for minimizing offset effects without using complicated electronic circuits. Hall effect device may include a substrate, first and second device inputs, and first and second device outputs. The substrate of the Hall effect device may be connected electrically to an output pin of the Hall device to eliminate any effects caused by asymmetry of the voltage appearing in the channel relative to the substrate. The net effect of the high linearity interface is to eliminate any adverse effects to linearity of the system, especially at low magnetic flux levels where the output voltage of the Hall device would be relatively small compared to the offset voltage levels involved. The interface virtually eliminates adverse effects from operational amplifier input offset voltages, Hall effect device output offset voltages, and any common mode voltages.'

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Patent Owner(s)

  • ITRON GLOBAL SARL

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gervais, Michel Champigny sur Marne, FR 15 213
Goodwin, Wendell Dunwoody, GA 4 8
Heinz-Buethe, Karl Aerzen, DE 3 5
Kobbi, Farah Seneca, SC 3 6
Lancaster, Andrew Seneca, SC 12 110

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