Polishing by CMP for optimized planarization
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United States of America Patent
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Issued Date -
Apr 11, 2002
app pub date -
Sep 20, 2001
filing date -
Sep 20, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A polishing composition for polishing with a polishing pad to remove a metal layer from a semiconductor wafer having the metal layer and further having recessed metal in trenches, the composition having a concentration of BTA selected to maximize the rate of change in the removal rate of a metal layer with increases in downforce exerted by a polishing pad during polishing, which maximizes a difference between the removal rate of the metal layer and the removal rate of the recessed metal in trenches.
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