Method of etching semiconductor device using neutral beam and apparatus for etching the same
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United States of America Patent
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N/A
Issued Date -
May 23, 2002
app pub date -
Nov 8, 2001
filing date -
Nov 22, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method and an apparatus for etching a semiconductor device which can perform an etching process without causing electrical and physical damages using a neutral beam generated by a simple apparatus. In the method, ions of an ion beam having a predetermined polarity are extracted from an ion source and accelerated. An accelerated ion beam is reflected by a reflector and neutralized. A substrate to be etched positioned in the path of the neutral beam in order to etch a special material layer on the substrate with the neutral beam. The gradient of the reflector is adjusted to control an angle of incidence of the ion beam incident on the reflector, and a voltage is applied to the reflector to control the path of an incident ion beam.
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