Reliability barrier integration for Cu application
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United States of America Patent
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Apr 11, 2006
Issued Date -
N/A
app pub date -
Jan 17, 2002
filing date -
May 14, 1997
priority date (Note) -
Expired
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Abstract
Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.
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