US Patent Application No: 2002/0070,416

Number of patents in Portfolio can not be more than 2000

Current isolating epitaxial buffer layers for high voltage photodiode array

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Abstract

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An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
LAWRENCE LIVERMORE NATIONAL SECURITY, LLCLIVERMORE, CA1043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cooper, Gregory A Pleasant Hill, US 4 101
Morse, Jeffrey D Martinez, US 39 751

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2003/0173,581 Photodiode stacks for photovoltaic relays and the method of manufacturing the same 0 2003
 
Naos Convergent Technology, Inc. (1)
* 6,750,523 Photodiode stacks for photovoltaic relays and the method of manufacturing the same 3 2003
 
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8,871,024 High pressure apparatus and method for nitride crystal growth 2 2011
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8,686,431 Gallium and nitrogen containing trilateral configuration for optical devices 5 2011
8,912,025 Method for manufacture of bright GaN LEDs using a selective removal process 0 2011
8,740,413 System and method for providing color light sources in proximity to predetermined wavelength conversion structures 8 2011
8,986,447 High pressure apparatus and method for nitride crystal growth 0 2012
8,482,104 Method for growth of indium-containing nitride films 10 2012
8,492,185 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices 10 2012
9,105,806 Polarization direction of optical devices using selected spatial configurations 0 2012
9,157,167 High pressure apparatus and method for nitride crystal growth 0 2012
8,618,560 Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 3 2012
8,802,471 Contacts for an n-type gallium and nitrogen substrate for optical devices 5 2012
9,000,466 Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening 0 2013
9,269,876 Light emitting diodes with low refractive index material layers to reduce light guiding effects 0 2013
8,987,156 Polycrystalline group III metal nitride with getter and method of making 0 2013
8,686,458 Power light emitting diode and method with current density operation 2 2013
8,994,033 Contacts for an n-type gallium and nitrogen substrate for optical devices 0 2013
9,293,644 Power light emitting diode and method with uniform current density operation 0 2013
9,076,926 Gallium and nitrogen containing trilateral configuration for optical devices 0 2014
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SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
* 9,312,422 Light receiving element, semiconductor epitaxial wafer, method for manufacturing the light receiving element, method for manufacturing the semiconductor epitaxial wafer, and detecting device 0 2011
* 2013/0248,821 LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE LIGHT RECEIVING ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR EPITAXIAL WAFER, AND DETECTING DEVICE 3 2011
 
SUNPOWER CORPORATION (1)
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Elmhurst Research, Inc. (1)
8,435,347 High pressure apparatus with stackable rings 14 2010
 
Sorra, Inc. (1)
8,905,588 System and method for providing color light sources in proximity to predetermined wavelength conversion structures 1 2014
* Cited By Examiner