Capacitor constructions with enhanced surface area

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United States of America Patent

PATENT NO 7288808
SERIAL NO

10050334

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of the substrate. A capacitor dielectric layer and a second capacitor electrode may be formed over the dielectric layer. The method may further include forming rugged polysilicon over the substrate, the first electrode being over the rugged polysilicon. Accordingly, the outer surface area of the first electrode can be at least 30% greater than the outer surface area of the substrate without the first electrode including polysilicon.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Vishnu K Boise, ID 150 3214
Mercaldi, Garry A Boise, ID 44 351

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