Low dislocation buffer and process for production thereof as well as device provided with low dislocation buffer
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United States of America Patent
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Issued Date -
Aug 1, 2002
app pub date -
Aug 31, 2001
filing date -
Dec 4, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
To provide a low dislocation buffer, which can be formed by a simple process for a short period of time, and there is no fear of producing cracks, a first layer made of a nitride semiconductor containing an impurity at a concentration exceeding its doping level is laminated a predetermined number of times alternately with a second layer made of a nitride semiconductor containing no impurity on a substrate to form a superlattice structure in a low dislocation buffer formed between the substrate and a nitride semiconductor as a device material to be formed for constituting a device structure on the substrate.
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