REACTIVE ION ETCHING OF SILICA STRUCTURES
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United States of America Patent
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N/A
Issued Date -
Aug 8, 2002
app pub date -
Jun 1, 1999
filing date -
Oct 4, 1996
priority date (Note) -
Abandoned
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Abstract
The invention relates to a method for etching of silica-based layers/substrates by reactive ion etching system (10) using an etching gas mixture of CHF.sub.3/AR through a photoresist mask. Reactive ion etching is carried out under conditions of simultaneous isotropic deposition of a carbon-based polymer where the polymer deposition rate is controlled by adjusting process control parameters of RF power, sample temperature, O.sub.2 and CF.sub.4 additions.
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