SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
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United States of America Patent
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N/A
Issued Date -
Aug 22, 2002
app pub date -
Apr 22, 2002
filing date -
Aug 11, 2000
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.
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