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Abstract

A multi-chamber system for processing semiconductor wafers with inductively coupled plasma comprises an inductive coil arrangement for plasma generation disposed on dielectric windows of a reaction chamber, in which the inductive coil arrangement includes a plurality of coil units in parallel to each other with a current flowing through in a direction opposite to that of adjacent coil units and a metal ring disposed above each of the coil units to meet a specific impedance. The inductive coil arrangement for plasma generation reduces the capacitive coupling between the inductive coil arrangement and the produced plasma, thereby decreasing the sheath voltage thereof and damages to the wafers during the process with the plasma. In the multi-chamber system, a plurality of working platforms are provided on a susceptor in the reaction chamber such that a plurality of small-size wafers can be simultaneously processed. The system is preferably employed with applications for simultaneously processing a plurality of small-size III-V compound semiconductors, especially suitable for etching and chemical deposition process.

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First Claim