Silicon wafer and method for producing the same
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United States of America Patent
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Issued Date -
Sep 12, 2002
app pub date -
May 16, 2000
filing date -
Dec 24, 1997
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An n-type wafer is provided having a <111> crystal axis in which the resistivity distribution in the surface of the wafer is uniform. The wafer is suitable for use in, e.g., a zener diode. A method is provided for growing a single crystal of n-type silicon doped with a group V element such as phosphorus using the Czochralski method or the floating zone melting (FZ) method wherein the center axis of the silicon single crystal is tilted by a tilt angle of 1-6 degrees from the <111> crystal axis. The silicon single crystal is sliced obliquely at the angle corresponding to the tilt angle to yield an n-type wafer having a <111> crystal axis.
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