Polishing method for selective chemical mechanical polishing of semiconductor substrates

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United States of America Patent

APP PUB NO 20020132560A1
SERIAL NO

09759583

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Abstract

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A chemical mechanical polishing method is provided for polishing substrates with one or more barrier layers on an underlying dielectric layer utilizing a polishing composition with a high selectivity for removal of the barrier layer material (for e.g. tantalum) resulting in a substrate with a planar dielectric layer with minimal scratching and erosion.

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Patent Owner(s)

Patent OwnerAddress
RODEL HOLDINGS INC1105 NORTH MARKET STREET SUITE 1300 WILMINGTON DE 19899

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Block, Kelly H Elkton, MD 3 30
Luo, Qiuliang Newport Beach, CA 9 81
Ye, Qianqiu(Christine) Wilmington, DE 7 74

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