Post etch cleaning composition for dual damascene system
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 2, 2007
Grant Date -
Sep 26, 2002
app pub date -
Dec 4, 2001
filing date -
Jul 6, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully