Photo-sensor layout for increased quantum efficiency
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United States of America Patent
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Issued Date -
Oct 3, 2002
app pub date -
Mar 30, 2001
filing date -
Mar 30, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Photo-sensors, such as photo-diodes, are formed using regions having layout shapes that tend to decrease leakage associated with high electric field strengths and mechanical stresses along the region's non-horizontal edges. According to one characterization of the present invention, the regions have a layout shape having more than four sides, in which all interior angles between adjacent sides of the layout shape are greater than 90 degrees. According to another characterization, the regions have a layout shape having at least one pair of mutually orthogonal sides with an intervening side that forms two interior angles greater than 90 degrees with the mutually orthogonal sides. Under either characterization, the electric field strengths and the mechanical stresses along the non-horizontal edges of the region defined by the adjacent sides of the layout shape, are reduced, thereby reducing leakage and increasing the overall quantum efficiency of the resulting photo-sensors.
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