Importance

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Abstract

There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1.times.10.sup.13 atoms/cm.sup.3 or more, or with nitrogen doping at a concentration of 1.times.10.sup.12 atoms/cm.sup.3 and carbon doping at a concentration of 0.1.times.10.sup.16-5.times.10.sup.16 atoms/cm.sup.3 and/or boron doping at a concentration of 1.times.10.sup.17 atoms/cm.sup.3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

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First Claim