Organosilicon precursors for interlayer dielectric films with low dielectric constants
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 24, 2003
Grant Date -
Oct 3, 2002
app pub date -
Aug 31, 2001
filing date -
Jan 17, 2001
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully