Manufacturing method of semiconductor device
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United States of America Patent
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N/A
Issued Date -
Oct 17, 2002
app pub date -
Mar 26, 2002
filing date -
Apr 5, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to a manufacturing method of a semiconductor device on which a barrier insulating film that coats a wiring, particularly a copper wiring, is formed. The configuration of the method includes the steps of: transforming film forming gas containing tetraethoxysilane (TEOS) and nitrogen monoxide (N.sub.2O) into plasma to cause reaction; and forming a barrier insulating film 35a, 39 that coats a copper wiring 34, 38 on a substrate 31 where the copper wiring 34, 38 is exposed on a surface thereof.
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