Integrated circuit trench etch with incremental oxygen flow

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20020160616A1
SERIAL NO

09797323

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Abstract

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Trenches are made in an integrated circuit by a process that incrementally increases the amount of oxygen during a trench etch. The trench may be an isolation trench or a gate trench for a QVDMOS device.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5005 E MCDOWELL ROAD MAILDROP A700 PHOENIX AS 85008

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cumbo, Joseph L West Wyoming, PA 4 168
Grebs, Thomas E Mountaintop, PA 46 2120

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