Electrostatically actuated micro-electro-mechanical devices and method of manufacture

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20020167072A1
SERIAL NO

10099153

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In accordance with one embodiment, a method is provided for fabricating electrodes for an electrostatically actuated MEMS device. The method includes patterning a surface of a wafer to define trenches to be etched, with each trench having an area selected in accordance with a desired depth; etching the surface of the wafer to form the trenches with the etch rate being varied in accordance with the trench area such that the trenches have depths determined by their respective areas; depositing an electrically conductive material in the trenches to form the electrodes; and removing portions of the wafer surrounding the electrodes. In accordance with another embodiment, a method of fabricating an electrostatically actuated MEMS mirror device is provided. The method includes providing a structure having a wafer including a trenches filled with material forming electrodes, and a mirror structure supported on the wafer above the trenches, the mirror structure including a mirror and a suspension mechanism for supporting the mirror with respect to the wafer, the mirror structure being covered by a protective layer; selectively etching the structure to expose the electrodes and to release the mirror structure such that the mirror is suspended by the suspension mechanism above the electrodes; and removing the protective layer from the mirror structure. In accordance with another embodiment, an electrostatically actuated MEMS mirror device formed from a double-bonded wafer stack is provided. The device includes a middle wafer having raised and inclined steering electrodes; a top wafer including a mirror structure having a mirror and a suspension mechanism for rotatably supporting the mirror above and with respect to the steering electrodes; and a handle wafer positioned below the middle wafer for providing front-side or back-side contacts for the electrodes.

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Patent Owner(s)

Patent OwnerAddress
COMING INTELLISENSE CORPORATION36 JONSPIN ROAD WILMINGTON MA 01887

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Andosca, Robert George Nashua, NH 2 73

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