Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance fourier transform infrared spectroscopy
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United States of America Patent
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Nov 16, 2004
Grant Date -
Dec 5, 2002
app pub date -
Apr 29, 2002
filing date -
Apr 30, 2001
priority date (Note) -
Expired
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Abstract
Ultrathin silicon oxide films thermally grown on Si(100) are characterized with Mirror-Enhanced Polarized Reflectance Fourier Transform Infrared spectroscopy (MEPR-FTIR). MEPR-FTIR is proposed to effectively probe properties of ultra-thin films. Using a mirror and a polarizer, MEPR-FTIR overcomes the difficulty of weak IR intensities normally encountered in ultrathin gate dielectrics such as SiO.sub.2 and the intensity of the silicon oxide longitudinal optical (LO) mode is found to increase by a factor of about 20. Therefore, FTIR spectrometers with sensitivity down to 0.01% may allow even sub-monolayer probing of silicon oxide on Si substrates.
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