Q-switched laser
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United States of America Patent
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Aug 17, 2004
Grant Date -
Dec 5, 2002
app pub date -
Jun 5, 2001
filing date -
Jun 5, 2001
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A microchip laser arrangement is disclosed. The arrangement is operative to emit Q-switched laser pulses at 1.54 .mu.m. The lasing medium of the laser arrangement is preferably comprised of Yb:Er-glass, and the Q-switch is comprised of a saturable absorber of cobalt doped spinel crystal. The lasing medium is preferably bonded to the absorber to form a monolithic body, upon the surface of which there are deposited dielectric stacks forming a resonant laser cavity. Pumping of the active medium is performed by means of an InGaAs laser diode emitting light at 0.97 .mu.m, corresponding well with the absorption of the Yb:Er-glass material.
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