Preparation of CIGS-based solar cells using a buffered electrodeposition bath
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United States of America Patent
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Issued Date -
Dec 19, 2002
app pub date -
Apr 10, 2001
filing date -
Apr 10, 2000
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Abandoned
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Abstract
A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
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