Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
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United States of America Patent
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Issued Date -
Dec 19, 2002
app pub date -
Jul 30, 2002
filing date -
Jul 31, 2000
priority date (Note) -
Abandoned
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Abstract
A method of forming tantalum nitride (TaN) compound layers for use in integrated circuit fabrication processes is disclosed. The tantalum nitride (TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.
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