Method for manufacturing an isolation trench filled with a high-density plasma-chemical vapor deposition oxide
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United States of America Patent
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Issued Date -
Jan 2, 2003
app pub date -
Jun 6, 2002
filing date -
Jun 7, 2001
priority date (Note) -
Abandoned
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Abstract
A method for filling an isolation trench in a semiconductor substrate includes the steps of forming a first silicon oxide layer on sidewalls and the floor of each trench by an oxidation step, forming a second silicon oxide layer on the sidewalls and floor of the trench by a first high-density plasma-chemical vapor deposition process without applying an RF voltage to a wafer so that the ratio of depositing to etching is extremely high and then forming a third silicon oxide layer by a second high-density plasma-chemical vapor deposition process having an RF voltage applied to the wafer so that the ratio of depositing to etching is much lower than in the first-mentioned process.
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