Structure and method for microelectromechanical system (MEMS) devices integrated with other semiconductor structures
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United States of America Patent
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Issued Date -
Jan 23, 2003
app pub date -
Jul 23, 2001
filing date -
Jul 23, 2001
priority date (Note) -
Abandoned
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Abstract
Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.
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