Semiconductor surface-emitting laser with integrated photodetector
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United States of America Patent
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N/A
Issued Date -
Jan 30, 2003
app pub date -
Jul 25, 2001
filing date -
Jul 25, 2001
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A VCSEL device has a VCSEL portion having a bottom laser cavity mirror, a top laser cavity mirror, and an active region disposed between the top and bottom mirrors; and a photodetector deposited directly onto a top surface of the laser structure, without an independent substrate, and situated so that light generated by the laser structure and exiting through the top mirror impinges on said photodetector. The integrated photodetector may be used to monitor the optical power of the light output by the laser, to control the optical power and/or to detect laser failure.
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