Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
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United States of America Patent
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Feb 24, 2004
Grant Date -
Feb 20, 2003
app pub date -
Dec 14, 2000
filing date -
Dec 14, 2000
priority date (Note) -
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Abstract
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
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