Hybrid active and electronic circuit with evanescent coupling
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United States of America Patent
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Issued Date -
Feb 27, 2003
app pub date -
Feb 20, 2002
filing date -
May 17, 2001
priority date (Note) -
Abandoned
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Abstract
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
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